Navitas Semiconductor Corp. has reached a significant production milestone, confirming that initial shipments of its fifth-generation (Gen 5) GaNFast technology manufactured inside the United States will commence this September. Fabricated in close collaboration with GlobalFoundries (GF), the milestone marks a major step forward in establishing a resilient domestic gallium nitride (GaN) power semiconductor supply chain tailored for high-density artificial intelligence infrastructure and vital national security programs.
The release stems from a strategic, long-term manufacturing partnership initially forged between the two semiconductor leaders in November 2025. Under the agreement, Navitas co-engineered and adapted its proprietary Gen 5 GaNFast field-effect transistors (FETs) and integrated circuits (ICs) specifically for GF’s advanced 200mm GaN-on-silicon manufacturing facility located in Burlington, Vermont. GF remains the only pure-play semiconductor foundry based in the U.S. that maintains an extensive, operational manufacturing presence spanning the United States, Europe, and Singapore.
Bringing next-generation GaN production onto American soil directly addresses the surging power constraints of hyperscale computing facilities. As artificial intelligence clusters and performance computing workloads demand unprecedented energy delivery, power density and conversion efficiency have become critical system bottlenecks. Navitas’ wide-bandgap GaN solutions—which monolithically consolidate power switching, gate drive, sensing, control, and system protection onto a single chip allow power systems to switch substantially faster and cooler than legacy silicon equivalents.
Since introducing its flagship platform in 2014, Navitas has secured over 300 issued and pending patents covering wide-bandgap gallium nitride and silicon carbide (SiC) engineering. Navitas combined its proprietary process design kits (PDKs) and device architectures with GF’s decades of high-volume wafer fabrication experience to transition the Gen 5 lineup from design into commercial-scale domestic fabrication.
“Together with GlobalFoundries, we have established a trusted US-domestic manufacturing source for our GaNFast Gen 5 and future generations, which will play a critical role in powering AI infrastructure and high-performance computing while strengthening the resilience of the US semiconductor ecosystem,” said Chris Allexandre, President and CEO of Navitas Semiconductor.
Kannan Soundarapandian, senior vice president of GF’s power business, echoed the sentiment, noting,”The first shipment from our U.S. manufacturing line demonstrates how GF and Navitas are turning advanced GaN innovation into a secure, scalable domestic supply. By combining Navitas’ power semiconductor leadership with GF’s manufacturing expertise, we are enabling the high-efficiency power solutions needed for AI infrastructure and other critical applications while strengthening the resilience of the US semiconductor ecosystem.”
The initial Gen 5 GaNFast commercial portfolio centers around high-voltage 650V GaN FETs offering on-resistance ratings of 11mΩ, 18mΩ, 50mΩ, 120mΩ, and 150mΩ. Following the initial wafer deliveries in September, the companies plan to distribute internal validation samples in October, with qualified samples reaching strategic customer partners before the conclusion of 2026.
