Axcelis Technologies Inc. has announced its sponsorship and participation in the 23rd International Conference on Silicon Carbide and Related Materials (ICSCRM 2026). The premier industry gathering takes place from September 28 through October 2 at Pacifico Yokohama North in Japan.
Axcelis, an established global provider of ion implantation solutions for the semiconductor sector, will host visitors at Booth #F3 throughout the conference. Alongside its exhibition, company technologists and research collaborators plan to deliver four technical presentations detailing crucial processing milestones for next-generation silicon carbide (SiC) devices:
- Stacking Fault Control: Suppression of stacking fault expansion in SiC epitaxial layers via substrate implantation.
- Ohmic Contact Optimization: n-Type 4H-SiC contact engineering through implantation-annealing co-optimization.
- High-Voltage Architecture: Manufacturability of single epi step 1200V SiC superjunction pillars using channeling ion implantation.
- Device Reliability: Sensitivity of SiC superjunction MOSFET performance to high-energy implantation of p-pillars.
These topics address critical physical bottlenecks in scaling SiC power devices, which power electric vehicles, renewable energy systems, and industrial infrastructure.
“We are excited to participate in ICSCRM 2026, one of the premier technology forums for the power device market,” said Dr. Russell Low, President and CEO of Axcelis. “As a world leader in ion implantation solutions for power devices, Axcelis is proud to support this dynamic market with our Purion Power Series+™ platform, which delivers enabling, highly differentiated capabilities and advanced process control. Ion implantation is one of the most critical steps in manufacturing silicon carbide devices, a market Yole Group estimates will reach $11 billion by 2031, growing at a 20% CAGR from 2025 to 2031.”
Attendees can meet the Axcelis engineering and executive teams at Booth #F3 to discuss how the company’s Purion product portfolio supports high-yield manufacturing and complex superjunction architectures for high-voltage power applications.
